Light-emitting device

ABSTRACT

A light-emitting device includes: a base member; a base body formed on an upper surface of the base member, the base body including a wiring layer; a light-emitting element mounted on an upper surface of the base body, wherein the light-emitting element includes an element-substrate, and a semiconductor layer located on the element-substrate; a resin frame located on the upper surface of the base body; and a first resin located inside the resin frame to cover a part of side surfaces of the light-emitting element, a part of inner side surface of the resin frame, and the upper surface of the base body. The first resin includes: a reflective material layer that contains a reflective material, and a resin layer that is located on an upper surface of the reflective material layer and does not contain the reflective material.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is continuation of U.S. patent application Ser.No. 16/687,853, filed on Nov. 19, 2019, which is based upon and claimspriority to Japanese Patent Application No. 2018-219726, filed on Nov.22, 2018, and Japanese Patent Application No. 2019-162884, filed on Sep.6, 2019, the entire contents of which are incorporated herein byreference.

BACKGROUND

The present disclosure relates to a light-emitting device and a methodof manufacturing the same.

A light-emitting device employing a light-emitting element, such as alight-emitting diode or a laser diode, is used in various fieldsincluding general lighting such as interior lighting, on-board lightsources for vehicles, backlights of liquid crystal displays, and thelike. The performance required for these light-emitting devices isincreasing every day, and a further increase in reliability is desired.

A known light-emitting device includes a light-emitting element mountedon upper surface of a lead, a frame body surrounding the light-emittingelement and arranged on the upper surface of the lead, and a reflectionmember covering the side surfaces of the frame and of the light-emittingelement (for example, refer to Japanese Patent Publication No.2016-072412A).

SUMMARY

However, for a light-emitting device, as the application fields aregetting wider, better light extraction and better adhesion of thereflection members to the frame body and the lead have been desired.

Therefore, an object of certain embodiments of the present disclosure isto provide a light-emitting device having better light extraction andbetter adhesion, and to provide a method of manufacturing the same.

According to one embodiment, a light-emitting device includes: a basebody comprising a resin member, a first lead, and a second lead, whereinthe first lead and the second lead are supported by the resin member; alight-emitting element mounted on an upper surface of the base body; aresin frame located on the upper surface of the base body, surroundingthe light-emitting element; and a first resin located inside the resinframe to cover a part of side surfaces of the light-emitting element, apart of an inner side surface of the resin frame, and the upper surfaceof the base body, wherein the first resin comprises: a reflectionmaterial layer that contains a reflection material, and a resin layerthat is located on an upper surface of the reflective material layer anddoes not contain the reflective material; wherein the reflectivematerial is located in the reflection material layer to cover the uppersurface of the base body; and wherein the upper surface of the resinlayer comprises a flat region and a sloped region, wherein a height ofthe upper surface of the resin layer, measured from the upper surface ofthe base body, gradually increases as the upper surface of the resinlayer approaches the inner side surface of the resin frame.

According to another embodiment, a light-emitting device includes: abase member; a base body formed on an upper surface of the base member,the base body comprising a wiring layer; a light-emitting elementmounted on an upper surface of the base body; a resin frame located onthe upper surface of the base body; and a first resin located inside theresin frame to cover a part of side surfaces of the light-emittingelement, a part of inner side surface of the resin frame, and the uppersurface of the base body, the first resin comprising: a reflectivematerial layer that contains a reflective material, and a resin layerthat is located on an upper surface of the reflective material layer anddoes not contain the reflective material; wherein the reflectivematerial is located in the reflective material layer to cover the uppersurface of the base body; and wherein the upper surface of the resinlayer comprises a flat region and a sloped region, wherein a height ofthe upper surface of the resin layer, measured from the upper surface ofthe base body, gradually increases as the upper surface of the resinlayer approaches the inner side surface of the resin frame.

According to another embodiment, a method of manufacturing alight-emitting device includes: mounting a light-emitting element on anupper surface of a base body; forming a resin frame on the upper surfaceof the base body to surround the light-emitting element; injecting afirst resin containing a reflective material inside the resin frame sothat the first resin covers a part of side surfaces of thelight-emitting element, a part of an inner side surface of the resinframe, and the upper surface of the base body; and separating the firstresin into a reflective material layer containing the reflectivematerial and a resin layer not containing the reflective material, byuse of revolution of the base body to apply a centrifugal force to thebase body.

According to certain embodiments of the light-emitting device and themethod of manufacturing described in the present disclosure, alight-emitting device that has better light extraction and betteradhesion of respective parts of the light-emitting device can beobtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A schematically shows a plan view of a construction of alight-emitting device according to a first embodiment.

FIG. 1B shows a cross-sectional view along the IB-IB line of FIG. 1A.

FIG. 1C shows an enlarged cross-sectional view of a portion of FIG. 1B.

FIG. 2 shows a plan view of a light-emitting device according to thefirst embodiment, in which the resin frame and the first resin areomitted.

FIG. 3 shows a plan view of a light-emitting device according to thefirst embodiment, in which the first resin is omitted.

FIG. 4 shows a flow-chart of a manufacturing method of a light-emittingdevice according to the first embodiment.

FIG. 5A is a cross section along the VA-VA line of FIG. 2, andschematically shows a cross section of the base body on which thelight-emitting device is mounted in the first step of the manufacturingmethod of the light-emitting device according to the first embodiment.

FIG. 5B is a cross section along the VB-VB line of FIG. 3, andschematically shows a cross section of the base body on which a resinframe is formed in the second step of the manufacturing method of thelight-emitting device according to the first embodiment.

FIG. 5C schematically shows a cross section of the base body onto whichthe first resin is injected in the third step of the manufacturingmethod according to the first embodiment.

FIG. 5D is a cross section showing schematically a method of separatingthe first resin into a resin layer and a reflective material layer inthe fourth step of the manufacturing method according to the firstembodiment.

FIG. 6 is a cross section showing schematically a configuration of thelight-emitting device according to a second embodiment.

FIG. 7 is a flow-chart showing a flow of a manufacturing methodaccording to the second embodiment.

FIG. 8A schematically shows a perspective view of a construction of alight-emitting device according to a third embodiment.

FIG. 8B schematically shows a plan view of a construction of alight-emitting device according to the third embodiment.

FIG. 8C shows a cross-sectional view along the VIIIC-VIIIC line of FIG.8B.

DETAILED DESCRIPTION

Embodiments of the invention will be explained below with reference tothe figures. However, the embodiments described below are merelyexamples of light-emitting devices for realizing the technical conceptsof the present disclosure. The present invention is not limited to thedescribed embodiments. Further, the dimensions, materials, and theirrelative placements, etc., that are described in the embodiments are notintended to limit the scope of the present invention, and are merelyexplanatory examples. It should be noted that the size and thepositional relationships of the members shown in respective figures canbe exaggerated. Further, in the following explanations, the same namesand reference signs show identical members or members with identicalfunctions, and thus a repeated detailed explanation may be omitted.

First Embodiment <Light-Emitting Device>

First, an explanation of a light-emitting device according to a firstembodiment will be provided.

FIG. 1A schematically shows a plan view of a construction of alight-emitting device according to the first embodiment. FIG. 1B shows across-sectional view along the IB-IB line of FIG. 1A. FIG. 1C shows anenlarged cross-sectional view of a portion of FIG. 1B. FIG. 2 shows aplan view of a light-emitting device according to the first embodiment,in which the resin frame and the first resin are omitted. FIG. 3 shows aplan view of a light-emitting device according to the first embodiment,in which the first resin is omitted.

As shown in FIGS. 1A-1C, the light-emitting device 10 includes: a basebody 20 having a first lead 20A and a second lead 20B that are supportedby a resin member 20C; a light-emitting element 40 mounted on an uppersurface of the base body 20; a resin frame 50 arranged on the uppersurface of the base body 20; and a first resin 30 that contains areflective material and is arranged inside the resin frame 50 to cover apart of side surfaces of the light-emitting element 40, a part of innerside surface of the resin frame 50, and the upper surface of the basebody 20; wherein the first resin 30 includes a reflective material layer32 that contains the reflective material and a resin layer 31 that isarranged on the upper surface of the reflective material layer 32 anddoes not contain the reflective material; wherein, in the reflectivematerial layer 32, the reflective material is arranged to cover theupper surface of the base body 20; and wherein the upper surface of theresin layer 31, seen in cross section, includes a flat region 31A and asloped region 31B having a height h1, measured from the upper surface ofthe base body, being gradually elevated as the upper surface of theresin layer 31 approaches the inner side surface of the resin frame 50.In the following, respective configurations are explained.

(Base Body)

As shown in FIG. 2, the base body 20 includes the first lead 20A, thesecond lead 20B, and the resin member 20C supporting the first lead 20Aand the second lead 20B in a state being separated from each other.

The first lead 20A includes, for example, a mounting portion 21A formedsubstantially as a polygonal shape in the center of the base body 20, inwhich the light-emitting element 40 is mounted, a terminal portion 23Aarranged on one end of the base body 20, and a connection portion 22Aconnecting the mounting portion 21A and the terminal portion 23A. Awidth W22 of the connection portion 22A is smaller than a width W21 ofthe mounting portion 21A and a width W23A of the terminal portion 23A.The width W23 of the terminal portion 23A is wider than the width W21 ofthe mounting portion 21A and is comparable to the base body 20. Itshould be noted that the connection portion 22A includes a region beingconnected with a wire 60 from the light-emitting element 40. Here, inthe first lead 20A and in the second lead 20B, the widths represent amaximum length in a direction perpendicular to a line connecting thecenter of the mounting portion 21A and the center of the connectingportion 22A.

Further, the mounting portion 21A is formed substantially as an octagon.Thus, the mounting portion 21A includes a first side 21A1 having a samelength as the width W22 of the connecting portion 22A, a second side21A2 being parallel and being opposed to the first side 21A1, a thirdside 21A3 being perpendicular to the first side 21A1 and to the secondside 21A2, a fourth side 21A4 being perpendicular to the first side 21A1and to the second side 21A2 and being opposed to the third side 21A3, afifth side 21A5 being slanted and connecting the first side 21A1 and thethird side 21A3, a sixth side 21A6 being slanted and connecting thefirst side 21A1 and the fourth side 21A4, a seventh side 21A7 beingslanted and connecting the second side 21A2 and the third side 21A3, andan eighth side 21A8 being slanted and connecting the second side 21A2and the fourth side 21A4. Further, the mounting portion 21A includesprotruding portions that are formed to protrude respectively from thethird side 21A3 and from the fourth side 21A4.

The second lead 20B is arranged to have a form that makes the distancesto the second side 21A2, to the sixth side 21A6, and to the seventh side21A7 to be approximately constant. Further, the second lead 20B has awidth approximately equal to the width W23 of the terminal portion 23A,and, in a longitudinal direction, the second lead 20B has one endportion and the other end portion that are bent to the side of themounting portion 21A to be wider in area, thus forming connecting endportions 20B1, 20B2, etc. One connecting end portion 20B1 includes anarea for mounting a protection element 80, and the other connecting endportion 20B2 includes an area for connecting a wire 60 of thelight-emitting element 40.

Seen in a plan view, the area of the first lead 20A may be larger thanthe area of the second lead 20B. Because a light-emitting element 40 ismounted on upper surface of the mounting portion 21A of the first lead20A, due to the larger area of the mounting portion 21A of the firstlead 20A, the conductivity for the heat produced in the light-emittingelement 40 to the first lead 20A can be more enhanced. Due to this, thetemperature increase of the light-emitting element 40 can be suppressed,and the reliability of the light-emitting device 10 can be improved.

The end portions of the first lead 20A and/or the second lead 20B mayinclude a recessed portion or a protruding portion. By providing arecessed portion or a protruding portion in a place where the first lead20A and/or second lead 20B contact with the resin member 20C, it becomespossible to increase the contact area between the first lead 20A and/orsecond lead 20B and the resin member 20C. Due to this, the adhesionbetween the first lead 20A and/or second lead 20B and the resin member20C can be improved.

The first lead 20A and the second lead 20B are used to apply a voltagefrom an external power supply to an electronic component such as thelight-emitting element 40. The first lead 20A and the second lead 20Bmay be formed from a material that has a relatively large thermalconductivity. For example, by using a material having a thermalconductivity larger than around 200 W/(m·K), the conductivity for theheat produced in the light-emitting element 40 to the first lead 20A canbe more enhanced.

The first lead 20A and the second lead 20B may be formed from a materialthat can be easily worked by punching or cutting and has a highstrength. For example, a single layer or a laminated body of a metalsuch as copper, aluminum, gold, silver, tungsten, iron, nickel or analloy of these metals, phosphor bronze, copper containing iron, and soon, can be used as a base material. It should be noted that the metallayer of the laminated body can be provided to the entire surface of thefirst lead 20A and the second lead 20B, or it can be provided partially.In addition, the metal layer of the laminated body can be provided toonly one lead.

The first lead 20A and the second lead 20B can also include a reflectivefilm on their surfaces. For the reflective film, one or more metals ofaluminum, copper, gold, etc., can be used. In particular, silver may beused for the reflective film. By such an arrangement, it is possible toimprove the light extraction efficiency of the light-emitting device 10.

As a method of forming the reflective film on the first lead 20A and onthe second lead 20B, various methods such as plating, evaporation,sputtering, ion-beam assisted evaporation, etc., can be considered. Thefilm thickness can be a film thickness by which the light from thelight-emitting element 40 can be effectively reflected, for examplearound 20 nm-10 μm, maybe around 50 nm-5 μm, or around 100 nm-3 μm. Itshould be noted that the thickness and the shape of the first lead 20Aand the second lead 20B can be appropriately arranged as known in theart.

The resin member 20C is arranged around the first lead 20A, between thesecond lead 20B and the first lead 20A, and around an end portion andthe other end portion of the second lead 20B, supporting the first lead20A and the second lead 20B. This resin member 20C is, for example, isformed by injecting a molding resin from a region (resin injectingportion) that is widened as it becomes more distant from a connectionportion 22A between the terminal portion 23A and the two slanted sides,the fifth side 21A5 and the sixth side 21A6, of the mounting portion21A, and by filling the molding resin into around the first lead 20A,into between the second lead 20B and the first lead 20A, and into arounda one end portion and the other end portion of the second lead 20B. Byinjecting the molding resin from the resin injecting portion in thisway, it is possible to easily fill the molding resin also into theregion far from the resin injecting portion, for example into betweenthe second lead 20B and the first lead 20A. Further, because the shapeof the mounting region 21A of the first lead 20A is arranged to beapproximately a polygon, and because, in its corner portions, the fifthside 21A5, the sixth side 21A6, the seventh side 21A7, and the eighthside 21A8 are provided, it becomes easier to conduct the molding resininto around the first lead 20A, into between the second lead 20B and thefirst lead 20A, and into around one end portion and the other endportion of the second lead 20B.

As a material for the resin member 20C, epoxy resin, silicone resin, BTresin, polyamide resin, polyimide resin, nylon resin, non-saturatedpolyester, etc. can be considered. These resin materials can be arrangedto contain a coloring agent, a filling material, a reinforcing fiber,etc. that are known in the art. When, as a coloring agent, a whitefiller such as titanium oxide, zinc oxide for a coloring material isused, it is possible to improve the light extraction efficiency of thelight-emitting device. Further, when these resins are arranged tocontain a black filler having a large thermal radiation coefficient suchas carbon black, the heat can efficiently escape from the light-emittingdevice 40. As a filler, silicon oxide, aluminum oxide, etc. can beconsidered. As a reinforcing fiber, silicon oxide, potassium titanate,etc. can be considered.

(Light-Emitting Element 40)

The light-emitting element 40 is mounted on upper surface of themounting portion 21A of the first lead 20A. The light-emitting element40 is a semiconductor element that emits light by applying a voltage andhas a light-emitting surface on its upper surface. The light-emittingelement 40 may include an element-substrate 41 that consists of sapphireand the like, being arranged on a side to the base body 20, and asemiconductor layer 42 constituted of a nitride semiconductor, etc.,being arranged on the element-substrate 41. The wavelength of the lightemitted from the light-emitting element 40 can be selected fromultraviolet region to infrared region including the visible region(380-780 nm), according to composition of the nitride semiconductor. Forexample, for a light-emitting element 40 having a peak wavelength of430-490 nm, In_(X)Al_(y)Ga_(1-X-Y)N (0≤X, 0≤Y, X+Y≤1) and the like canbe used as a nitride semiconductor. Further, the light-emitting element40 can be arranged on upper surface of the first lead 20A via asubmount.

The shape of the light-emitting element 40 can be, seen in a top view, atriangle, a tetragon, a hexagon, or a shape similar to these, or anyshape. Further, the light-emitting element 40 can have a configurationof electrodes on one side, in which a n-electrode 43 and a p-electrode44 are formed on one same side, or can have a configuration ofelectrodes on both sides, in which the n-electrode 43 and thep-electrode 44 are formed on two different sides. The n-electrode 43 andthe p-electrode 44 of the light-emitting element 40 can also be soconfigured that they are connected to the first lead 20A and to thesecond lead 20B respectively via a wire 60. It should be noted that then-electrode 43 and the p-electrode 44 of the light-emitting element 40can also have a configuration that they are connected respectively tothe second lead 20B and to the first lead 20A directly. For the wire 60,a metallic material having a good conductivity such as gold, aluminum,copper, silver, etc. can be used.

In case when the light-emitting element 40 has a configuration ofelectrodes on one side, the light-emitting element 40 is mounted face-upon the first lead 20A. The face-up mounting is a construction that thelight-emitting element 40 is mounted with the side opposing to the sideof where the electrodes are formed down to the base body 20. The joiningmaterial for the light-emitting element 40 and the first lead 20A can bean insulating joining material or a conductive joining material, and anyknown joining material can be used. For example, as an insulatingjoining material, an epoxy resin, a silicone resin, or a modified resinthereof can be considered, and as a conductive joining material, aconductive paste of silver, gold, palladium, etc., a solder of such asAu—Sn eutectic crystal, and a brazing material of such as low meltingpoint, can be considered.

In case when the light-emitting element 40 has a configuration ofelectrodes on both sides, as a joining material for the light-emittingelement 40 and the first lead 20A, any conductive joining material canbe used, and a known joining material can be used. For example, as aconductive joining material, a conductive paste of silver, gold,palladium, etc., a solder of such as Au—Sn eutectic crystal, and abrazing material of such as low melting point, can be considered.

(Resin Frame)

As shown in FIG. 3, the resin frame 50 is a frame body that is anannular frame body arranged on upper surface of the base body 20 toenclose the light-emitting element 40. The shapes of inner rim and outerrim of the resin frame 50 can be, seen in a top view, a polygon such asa circle, an oval, a square, a hexagon, an octagon, a shape havingcorners of a polygon chamfered, or any various shape. Because the resinframe 50 is arranged to surround the light-emitting element 40, anuncured raw material, which turns to be the first resin 30 arrangedinside the resin frame 50, can be kept inside the resin frame 50. Theresin frame 50 is formed by curing the arranged uncured raw material,which turns into the resin frame 50, in a desired region for the resinframe 50.

The resin frame 50 may be arranged to cover a connection portion of thefirst lead 20A and the resin member 20C, namely it is so arranged thatonly the mounting portion 21A of the first lead 20A is exposed insidethe resin frame 50 and the resin member 20C is not exposed. Because theresin member 20C is not exposed inside the resin frame 50, a lightpenetrated the first resin 30 cannot be absorbed by the black filleretc. as contained in the resin member 20C. As a result, the lightpenetrated the first resin 30 is reflected by the upper surface of themounting portion 21A, and thus the light extraction from thelight-emitting device 10 is improved.

Further, the dimension of the cross-sectional diameter D of the resinframe 50 (refer to FIG. 3) is appropriately selected so that themounting portion 21A of the first lead 20A is exposed inside the resinframe 50, and so that a portion of the first lead 20A as well as aportion of the second lead 20B and a portion of the resin member 20C areexposed outside the resin frame 50.

The cross-sectional shape of the resin frame 50 (refer to FIG. 1C) canhave one of various shapes, such as a circular shape including a partialcircle, an oval including a partial oval, a rectangular shape, as far asit is possible to keep the uncured first resin 30 inside the resin frame50. The cross-sectional shape of the resin frame 50 may have a circularshape including a partial circle so that the inner side surface of theresin frame 50 facing toward the light-emitting element 40 has a convexshape, and thus the cross-sectional shape has a curved shape with a topof the convex shape, namely with the inner-most point P of the resinframe 50. By arranging the cross-sectional shape of the resin frame 50to have a circular shape including the inner-most point P of a partialcircle, the reflective material layer 32 of the first resin 30 is formedbeneath the resin frame 50. Then, the reflective material layer 32 isformed to enter beneath the inner-most point P of the resin frame 50. Asa result, the light extraction from the light-emitting device 10 isimproved, because a light from the light-emitting element 40 enteringbeneath the resin frame 50 is reflected upwards, to the direction oflight extraction, by the reflective material layer 32.

As a material for the resin frame 50, phenol resin, epoxy resin, BTresin, PPA, and silicone resin can be considered. In particular, as amaterial for the resin frame 50, a silicone resin having a better lightresistance is preferred. For the resin frame 50, it is preferred thatthe base material for the base of the resin frame 50 is a materialidentical to the base resin of the first resin 30. Due to this, theadhesion between the resin frame 50 and the first resin 30 is improved.

The resin frame 50 can efficiently reflect the light from thelight-emitting element 40, when a powder of a reflective material, whichis hard to absorb the light from the light-emitting element 40 and has alarger refractive index than the base resin, is dispersed in the baseresin. As a reflective material, for example, titanium oxide, aluminumoxide, zirconium oxide, magnesium oxide can be used. In particular,titanium oxide is preferred, because it is relatively stable againstwater and has a large refractive index compared to water and the like.The resin frame 50 is a member that may have a reflectivity larger than60% against the light from the light-emitting element 40, or larger thanor equal to 70%. In this manner, the light arrived at the resin frame 50is hard to be absorbed by the resin frame 50, through which the lightextraction from the light-emitting device 10 is improved.

(First Resin)

The first resin 30 is arranged inside the resin frame 50, namely in theregion surrounded by the resin frame 50, and is a resin layer containinga reflective material, which covers a part of the side surface of thelight-emitting element 40, a part of the inner side surface of the resinframe 50, and the upper surface of the base body 20. Because the firstresin 30 covers a part of the side surface of the light-emitting element40 and does not cover the entire side surface, the light emitted to sidedirection from the light-emitting element 40 is not blocked, andtherefore the light extraction from the light-emitting device 10 isimproved. Because the first resin 30 covers a part of the side surfaceof the resin frame 50, the adhesion between the first resin 30 and theresin frame 50 is improved.

The first resin 30 includes the reflective material layer 32 and a resinlayer 31 that is arranged on upper surface of the reflective materiallayer 32 and does not contain the reflective material, namely the resinlayer 31 being configured by a base resin that turns into a base of thefirst resin 30. It should be noted that the reflective material layer 32is formed by sedimentation of the reflective material within the resinlayer 31, and therefore there is no interface between the reflectivelayer 32 and the resin layer 31. Thus, the first resin 30 is not such ascomposed of two members, the resin layer 31 and the reflective materiallayer 32. Further, for the purpose of convenience, a portion thatseparates the reflective layer 32 and the resin layer 31 may beoccasionally described as “upper surface of reflective layer 32”.

The reflective material layer 32 is arranged so that the reflectivematerial is arranged to cover the upper surface of the base body 20between the resin frame 50 and the light-emitting element 40. Due tothis, because the joining between the first resin 30 and the base body20 becomes a joining between the reflective material including metalparticles and the first lead 20A of the base body 20 including a metalmaterial, the adhesion between the first resin 30 and the base body 20is improved. Further, when the surfaces of the first lead 20Aconstituting the base body 20 is plated with Ag, sulfuration of Ag issuppressed, because the Ag plating layer is covered by the reflectivelayer 32.

The resin layer 31, seen in a cross-sectional view, has a flat region31A and a sloped region 31B of which height h1 on the side to the resinframe 50 measured from the upper surface of the base body 20 becomeslarger as it approaches to the inner side surface of the resin frame 50.The entire side surface of the resin layer 31 facing toward the resinframe 50 and the inner side surface of the resin frame 50 may becontacted. Further, for the resin layer 31, the upper surface, seen incross-sectional view, may have also a sloped region 31B of which heighth2 on the side to the light-emitting element 40 measured from the uppersurface of the base body 20 becomes larger as it approaches to the innerside surface of the light-emitting element 40.

For the first resin 30, because the upper surface of the resin layer 31has the sloped region 31B on the side to the resin frame 50 and theentire side surface of the resin layer 31 on the side to the resin frame50 contacts with the inner side surface of the resin frame 50, thecontact surface area between the resin frame 50 and the resin layer 31increases, improving adhesion between the resin frame 50 and the firstresin 30. Further, for the first resin 30, because the upper surface ofthe resin layer 31 has a sloped layer 31B on the side to thelight-emitting element 40, the contact surface area between thelight-emitting element 40 and the resin layer 31 is increased, improvingthe adhesion between the light-emitting element 40 and the first resin30. Further, the sloped regions 31B on the side to the resin frame 50and on the side to the light-emitting element 40 may have a curvedshape. When the sloped regions 31 B have a curved shape, then thereexists no stress concentrating portions and therefore the adhesion isimproved.

The height h1 of the resin layer 31 measured from the base body 20 islarger than the height h2 of the resin layer 31 measured from the basebody 20. Due to this, because the contact area between the resin frame50 and the resin layer 31 is more increased, the adhesion between theresin frame 50 and the first resin 30 is further improved.

The sloping degree of the sloped region 31B of the resin layer 31 on theside to the resin frame 50 may have a sloping angle between 30° and 60°.A similar sloping degree can be applied also to the sloped region 31B onthe side to the light-emitting element 40. When the sloping degree isemployed as mentioned, because the contact area between the first resin30 and the resin frame 50 or the light-emitting element 40 is increased,the adhesion is improved.

For the reflective material layer 32, seen in cross-sectional view, theupper surface may be flat. Namely, the upper surface of the reflectivematerial layer 32 may have a constant thickness along the upper surfaceof the base body 20. The reflective material layer 32 contains areflective material that has less adhesion to the resin frame 50. On theother hand, the resin layer 31 has a better adhesion to the resin frame50, because the base of the resin layer 31 is configured with a resin.Therefore, when the upper surface of the reflective material layer 32 isflat, the reflective material layer 32 comes into such a condition thatthe reflective material layer 32 is located between the partial circlebelow the inner-most point P of the resin frame 50 and the upper surfaceof the base body 20. As a result, the end portion of the reflectivematerial layer 32 enters beneath the lower portion of the resin frame50, by which the reflective material layer 32 becomes less separable.Further, if the upper surface of the reflective material layer 32 isflat, when seen in cross-sectional view, because the contact area of thereflective material layer 32 against the resin frame 50 can be made lesscompared with the configuration that the upper surface of the reflectivematerial layer 32 becomes higher as it approaches to the inner sidesurface of the resin frame 50 similarly to the upper surface of theresin layer 31. Since the contact area of the resin layer 31 against theresin frame 50 can be made larger instead, the adhesion between thefirst resin 30 and the resin frame 50 is improved.

When the light-emitting element 40 includes the element-substrate 41arranged on the side to the base body 20 and the semiconductor layer 42arranged on the element-substrate 41, regarding the upper surface of thefirst resin 30 covering the side surface of the light-emitting element40, namely regarding the upper surface of the sloped region 31B on theside to the light-emitting element 40, the height h2 measured from thebase body 20 may be lower than the bottom surface of the semiconductorlayer 42. Due to this, the light extraction from the light-emittingdevice 10 is improved, because the light emitted to side direction fromthe light-emitting element 40 is not blocked.

When inner side surface of the resin frame 50 has a curved shape thatbulges to the side facing toward the light-emitting element 40,regarding the upper surface of the sloped region 31B of the first resin30 covering the inner side surface of the resin frame 50, the height h1measured from the base body 20 may be lower than the top of the curvedshape P Due to this, because uplifting of the first resin 30 from thebase body 20 can be suppressed, the adhesion between the first resin 30and the base body 20 is further improved.

The first resin 30 is a resin layer including a base resin with areflective material contained therein. As the base resin, phenol resin,epoxy resin, BT resin, PPA, and silicone resin can be considered. Inparticular, as a material for the base resin, a silicone resin having abetter light resistance is preferred. Regarding the resin frame 50 andthe first resin 30, the base resin for the base of the first resin 30and the base resin of the resin frame 50 may be of same material. Due tothis, the adhesion between the resin frame 50 and the first resin 30 isimproved.

The first resin 30 can reflect the light from the light-emitting element40 efficiently by dispersing a powder of reflective material that barelyabsorbs the light from the light-emitting element 40 and has a largerrefractive index than the base resin. As the reflective material, forexample, titanium oxide, aluminum oxide, zirconium oxide, magnesiumoxide can be used. In particular, titanium oxide is preferred, becauseit is relatively stable and has a large refractive index against water.The reflective material is a material having a reflectivity that may belarger than 60% against the light from the light-emitting element 40, orlarger than or equal to 70%. In this manner, the light arrived at thefirst resin 30 is hard to be absorbed by the first resin 30, throughwhich the light extraction from the light-emitting device 10 isimproved.

The above explanation has been given for the light-emitting device 10including one light-emitting element 40. However, in an embodiment ofthe light-emitting device 10, it can be also configured such that aplurality of light-emitting elements 40 are employed and the resin frame50 is formed to surround the plurality of light-emitting elements 40collectively. Further, as shown in FIG. 1A, an embodiment of thelight-emitting device 10 can also include a protection element 80.

The protection element 80 prevents, for example, a current flow in areverse direction when a voltage of reverse direction is applied to thelight-emitting element 40, or an overcurrent flows through thelight-emitting element 40 when a forward voltage higher than theoperation voltage of the light-emitting element 40 is applied. As theprotection element 80, a protection circuit and an electrostaticprotection element are considered, in particular, a Zener diode can beused.

For the light-emitting device 10, the light extraction is improved byincluding a first resin 30 containing the reflective material, becausethe light emitted to side direction from the light-emitting element 40is reflected upwards by the reflective material to the direction oflight extraction. In addition, by covering a part of the side surface ofthe light-emitting element 40 with the first resin 30, the lightextraction is further improved, because the light emitted from thelight-emitting element 40 is barely blocked. Further, due to the factthat the first resin 30 includes the reflective material layer 32 andthe fact that, by this reflective material layer 32, a reflectivematerial is arranged to cover the upper surface of the base body, ametal-to-metal joining is established between the reflective materiallayer 32 and the base body 20, through which the reflective materiallayer 32 functions as a interposer layer against the base body 20,resulting in an improvement of adhesion of the first resin 30 and thebase body 20. Further, due to the fact that the first resin 30 includesthe resin layer 31 and the fact that the upper surface of the resinlayer 31 includes the sloped region 31B, the contact area between theresin layer 31 and the resin frame 50 is increased, resulting in animprovement of adhesion of the first resin 30 and the resin frame 50.

<Manufacturing Method of Light-Emitting Device>

Next, explanations are given to a manufacturing method of alight-emitting device according to the first embodiment.

FIG. 4 shows a flow-chart of a manufacturing method of a light-emittingdevice according to the first embodiment. FIG. 5A schematically shows across section of the base body on which the light-emitting device ismounted in the first step of the manufacturing method of thelight-emitting device according to the first embodiment, which crosssection corresponds to a cross section along the VA-VA line of FIG. 2.FIG. 5B is a cross section along the VB-VB line of FIG. 3, andschematically shows a cross section of the base body on which a resinframe is formed in the second step of the manufacturing method of thelight-emitting device according to the first embodiment. FIG. 5Cschematically shows a cross section of the base body onto which thefirst resin is injected in the third step of the manufacturing methodaccording to the first embodiment. FIG. 5D is a cross section showingschematically a method of separating the first resin into a resin layerand a reflective material layer in the fourth step of the manufacturingmethod according to the first embodiment.

As shown in FIG. 4, FIGS. 5A-5D, the manufacturing method of thelight-emitting device 10 includes: a first step S1 for mounting thelight-emitting element 40 on the upper surface of the base body 20including the first lead 20A and the second lead 20B that are supportedby the resin member 20C; a second step S2 for forming the resin frame 50on the upper surface of the base body 20 to surround the light-emittingelement 40; a third step S3 for injecting the first resin 30 containinga reflective material into inside the resin frame 50 so that the firstresin 30 covers a part of the side surfaces of the light-emittingelement 40, a part of the inner side surface of the resin frame 50, andthe upper surface of the base body 20; a fourth step S4 for separatingthe first resin 30 into the reflective material layer 32 containing areflective material and the resin layer 31 containing none of thereflective material, by applying a centrifugal force to the base body 20by use of revolution of the base body.

(First Step)

As shown in FIG. 5A, the first step S1 is a step of mounting thelight-emitting element 40 on the upper surface of the base body 20including the first lead 20A and the second lead 20B that are supportedby the resin member 20C. The light-emitting element 40 may be mounted onthe mounting portion 21A of the first lead 20A.

In the first step S1, the light-emitting element 40 is mounted on thebase body 20 applying a known method, wherein the bottom surface of theelement-substrate 41 of the light-emitting element 40 and the uppersurface of the base body 20 are joined using a known joining material.Next, the n-electrode 43 of the light-emitting element 40 iselectrically connected via a wire 60 to the first lead 20A. In addition,the p-electrode 44 of the light-emitting element 40 is electricallyconnected via a wire 60 to the second lead 20B. It should be noted thata protection element 80 can also be electrically connected via a wire 60to the first lead 20A. As a method of bonding, a known method such asball bonding, wedge bonding, etc. can be applied.

(Second Step)

As shown in FIG. 5B, the second step S2 is a step of forming the resinframe 50 on the upper surface of the base body 20 to surround thelight-emitting element 40. In the second step S2, a base resin inuncured state, which turns to the resin frame 50, is arranged in aregion of the upper surface of the base body 20 where the resin frame 50should be formed, and then the resin frame 50 is formed by curing thebase resin. It should be noted that the viscosity of the base resin isadjusted in advance so that the resin frame 50 takes a frame shape aftercuring.

(Third Step)

As shown in FIG. 5C, the third step S3 is a step of injecting the firstresin 30 containing a reflective material into inside the resin frame 50so that the first resin 30 covers a part of the side surfaces of thelight-emitting element 40, a part of the inner side surface of the resinframe 50, and the upper surface of the base body 20.

In the third step S3, the base resin in uncured state, which turns tothe base of the first resin 30, is injected by potting or spraying, etc.into inside the resin frame 50. The amount of injected base resin isadjusted so that the resin does not reach the semiconductor layer of thelight-emitting element 40. Then the base resin is cured after carryingout the next fourth step. Further, in the third step S3, when theuncured base resin is injected into inside the resin frame 50, a nozzle90 may be arranged directly above the resin frame 50 so that the uncuredbase resin is injected to flow along the inner side surface of the resinframe 50 on the upper surface of the base body 20 and to the sidesurfaces of the light-emitting element 40. It should be noted that theuncured base resin can be injected at the center of the upper surface ofthe base body 20.

If the base resin is injected from the side of the resin frame 50 asexplained above, due to difference in wettability between the uppersurface of the base body 20, the inner side surface of the resin frame50, and the side surfaces of the light emitting element 40, the slopedregions 31B, which respectively creep up to the inner side surface ofthe resin frame and to the side surfaces of the light-emitting element40, are formed on the upper surface of the base resin on both sides ofthe flat region 31, which is formed directly above the base body 20,namely the sloped regions 31B are formed on both sides respectivelyfacing toward the resin frame 50 and to the light-emitting element 40.The inner side surface of the resin frame 50 and the side surfaces ofthe light-emitting element 40 has higher wettability than the base body20 having a metal surface, namely than the upper surface of the firstlead 20A, due to difference of glossiness of these surfaces. Further,before injecting the uncured base resin, the inner side surfaces of theresin frame 50 can also be dipped into an organic solvent. By dippingthe inner side surface of the resin frame 50 into the organic solvent inadvance, the creeping up of the sloped region 31B can be enhanced. Itshould be noted that the shape etc. of the sloped regions 31B isadjusted by viscosity and the like of the injected base resin.

(Fourth Step)

As shown in FIG. 5D, the fourth step S4 is a step of separating thefirst resin 30 into the reflective material layer 32 containing areflective material and the resin layer 31 containing no reflectivematerial, by applying a centrifugal force due to revolution of the basebody 20.

In the fourth step S4, the base body 20 is revolved around a center axisof revolution S above the upper surface of the base body 20. Thus, thecentrifugal force is applied by use of the axis of revolution S so thatthe upper surface of the base body 20 faces to inside. The axis ofrevolution S above the upper surface of the base body 20 is parallel tothe upper surface of the base boy 20, being arranged in a directioncrossing the resin frame 50 and arranged above the base body 20. By therevolution of the base body 20, the reflective material contained in thefirst resin 30 is forced to sink to the upper side of the base body 20.Namely, the reflective material is arranged in a layer to cover theupper surface of the base body 20. It should be noted that, again, theshape of the upper surface of the reflective material layer 32 can beadjusted by the magnitude of the centrifugal force determined by therevolution speed, etc., and the upper surface of the reflective materiallayer 32 may be flat. It should be noted that, in the fourth step S4,after the revolution, the base body 20 can also be rotated around arotation axis that is arranged at the center of the base body 20 in adirection perpendicular to the longitudinal direction of the base body20. By this rotation, the height of the sloped regions of the resinlayer 31, h1, h2 (refer to FIG. 1C) can be formed higher.

Further, the creeping of the sloped regions 31B occurs also when thefirst resin 30 is cured after the fourth step S4.

In the manufacturing method of the light-emitting device 10, alight-emitting device 10 having a better light extraction and betteradhesion can be manufactured, because the first resin 30 including theresin layer 31 covering the sloped region 31B, which covers a part ofthe inner side surface of the resin frame 50, and the reflectivematerial layer 32, in which the reflective material is arranged to coverthe upper surface of the base body 20, can be formed by conducting thethird step S3 for injecting the first resin 30 and the fourth step S4for separating the first resin 30 into the reflective material layer 32and the resin layer 31. In the following, explanations are given torespective steps.

Second Embodiment <Light-Emitting Device>

At first, a light-emitting device according to a second embodiment isexplained. FIG. 6 is a cross section showing schematically aconfiguration of the light-emitting device according to the secondembodiment. It should be noted that the same constituents as thelight-emitting device according to the first embodiment are providedwith same reference numerals and their explanations are omitted.

The light-emitting device 10A, in addition to the same configuration asthe above light-emitting device 10, further includes a second resin 70covering the upper surface of the light-emitting element 40 and theupper surface of the first resin 30. Further, in the light-emittingdevice 10A, the second resin layer 70 may contain a phosphor.

(Second Resin 70)

The second resin 70 is a resin layer covering the upper surface of thesemiconductor layer 42 of the light-emitting element 40 and the uppersurface of the resin layer 31 of the first resin 30, and is arranged tocontact the inner side surface of the resin frame 50 so that the heightof the of the second resin 70, when seen in a cross-sectional view, doesnot exceed the height of the resin frame 50.

As a material for the second resin 70, a resin material or a glassmaterial, which are translucent, can be used. In particular, a resinmaterial is used for the material of the second resin 70. Because thefirst resin 30 as well as the resin frame 50 respectively include aresin material, and because the second resin 70 is also a resinmaterial, it is possible to improve the adhesion between the secondresin 70 and the first resin 30, and also the adhesion between thesecond resin 70 and the resin frame 50. As a resin material for thesecond resin 70, polycarbonate resin, epoxy resin, phenol resin,silicone resin, acryl resin, polymethylpentene resin, polynorborneneresin, or a modified resin of these resins, or a hybrid resin containingat least one of these resins can be used. In particular, for thematerial of the second resin 70, dimethylsilicone resin, phenylsiliconeresin, which have a better light resistance, are preferred. The secondresin 70 may contain a phosphor and can also contain a light diffusingagent. Further, when the second resin 70 contains a phosphor, the shapeof the upper surface of the second resin 70 may have a form that itscenter curves protruding downwards so that the distance between thephosphor and the light-emitting element 40 becomes smaller.

(Phosphor)

For the phosphor, particles of a phosphor, which can be excited by thelight from the light-emitting element 40 and can convert the wavelengthof the light emitted from the light-emitting element 40 or reflected bythe first resin 30, is used. For example, as a phosphor that can beexcited by blue light-emitting element or by ultraviolet light-emittingelement, yttrium-aluminum-garnet phosphor activated with cerium(YAG:Ce), lutetium-aluminum-garnet activated with cerium (LAG:Ce),nitride-containing calcium aluminosilicate phosphor activated witheuropium and/or chromium (CaO—Al₂O₃—SiO₂:Eu, Cr), silicate phosphoractivated with europium ((Sr,Ba)₂SuO₂:Eu), nitride phosphor such asβ-sialon phosphor, CASN phosphor, and SCASN phosphor, fluoride phosphorsuch as KSF phosphor, sulfide phosphor, chloride phosphor, silicatephosphor, phosphate phosphor, quantum dot phosphor can be considered. Bycombination of these phosphors and a blue light-emitting element or anultraviolet light-emitting element, a light-emitting device 10 havingvarious wavelength can be manufactured.

(Light Diffusion Agent)

As a light diffusion agent, titanium oxide, zirconium oxide, aluminumoxide, silicon oxide, etc. can be used. In particular, titanium oxide ispreferred, because it is relatively stable against water and because ithas a large refraction index.

In the light-emitting device 10A, by including the second resin 70, theintrusion of dust and the like from outside into the light-emittingdevice 10A can be suppressed, and therefore the reliability is improved.Further, in the light-emitting device 10A, because the second resin 70contains a phosphor, the wavelength of the light emitted from thelight-emitting element 40 or of the light reflected by the first resin30 can be converted, enabling adjustment of the color tone of theextracted light. In particular, when the first resin 30 has the slopedregions 31B, because the distance between the phosphor of the secondresin 70 and the light-emitting element 40 becomes smaller, thefluorescence efficiency is improved. Further, when the cross section ofthe resin frame 50 has a curved shape and the resin layer 31 is formedup to just below the inner-most point P of the resin frame 50, thefluorescence efficiency is improved, because the phosphor of the secondresin 70 will not enter into the lower part of the resin frame 50.

<Manufacturing Method of Light-Emitting Device>

Next, the manufacturing method of a light-emitting device according tothe second embodiment is explained. FIG. 7 is a flow-chart showing aflow of a manufacturing method according to the second embodiment. Itshould be noted that, regarding the steps, which are same as the firstembodiment, same reference numbers as the first embodiment are given tothem and their explanations are omitted.

In addition to the steps S1-S4, which are same as the manufacturingmethod of the light-emitting device 10, the manufacturing method of thelight emitting device 10A further includes a fifth step S5 for injectingthe second resin. Due to the fact that the manufacturing method of thelight-emitting device 10A includes this fifth step S5, the reliabilityand the color adjustability are improved.

The fifth step S5 is a step of injecting the second resin 70 into insidethe resin frame 50 so that the second resin 70 covers the upper surfaceof the light-emitting element 40 and the upper surface of the resinlayer 31 of the first resin 30. The second resin 70 may be injected sothat the inner side surface of the resin frame 50 contacts with thesecond resin 70. The injecting of the second resin 70 is carried out bya similar method as the first resin 30, by potting or spraying, etc.

Though it has been explained that, as an example, the second resin 70 isformed to have its center curved protruding downwards, it should benoted that, the second resin 70 can also be formed to have a same heightin a uniform manner. Further, the second resin 70 can be formed to haveits center curved upwards so that the second resin 70 becomes higher atdirectly above the light-emitting element 40.

Third Embodiment <Light-Emitting Device>

Next, explanation is given about a light-emitting device according to athird embodiment. FIG. 8A schematically shows a perspective view of aconstruction of a light-emitting device according to a third embodiment.FIG. 8B schematically shows a plan view of a construction of alight-emitting device according to the third embodiment. FIG. 8C shows across-sectional view along the VIIIC-VIIIC line of FIG. 8B.

The light-emitting device 10B includes: a base member 201; a base body200 having a wiring layer 202 formed on an upper surface of the basemember; a light-emitting element 40 mounted on an upper surface of thebase body 200; a resin frame 50 arranged on the upper surface of thebase body 200; and a first resin 30 that contains a reflective materialand is arranged inside the resin frame 50 to cover a part of sidesurfaces of the light-emitting element 40, a part of inner side surfaceof the resin frame 50, and the upper surface of the base body 200;wherein the first resin 30 includes a reflective material layer 32 thatcontains the reflective material and a resin layer 31 that is arrangedon the upper surface of the reflective material layer 32 and does notcontain the reflective material; wherein, in the reflective materiallayer 32, the reflective material is arranged to cover the upper surfaceof the base body 200; and wherein the upper surface of the resin layer31, seen in cross section, includes a flat region 31A and a slopedregion 31B having a height, measured from the upper surface of the basebody, being gradually elevated as the upper surface of the resin layer31 approaches the inner side surface of the resin frame 50. In thefollowing, respective configurations are explained.

Because the light-emitting device 10B basically includes a sameconstruction as the light-emitting device 10 and the construction of thebase body 200 is different from the base body 20, it will be explainedmainly about the difference and explanations about other parts that arealready explained will be omitted occasionally.

The base body 200 includes a base member 201 and a wiring layer 202formed on the upper surface of the base member. The light-emittingelements 40 are arranged with an array in a mounting region at center ofthe base body 200. The wiring layer 202 is formed in the periphery ofthe light-emitting elements 40, and a resin frame 50 is provided tocover a circularly formed portion of the wiring layer 202.

The base member 201 is formed with an insulation material in aplate-like shape. Here, for the base member 201, a material having ahigh heat dissipation may be used, or a material having a highlight-shielding and a high strength as the base member may be used.Specifically, a ceramic such as aluminum oxide, aluminum nitride,mullite, and a resin such as epoxy resin, phenol resin, polyimide resin,BT resin, (bismaleimide triazine resin), polyphthalamide (PPA), a metal(aluminum, copper, etc.), and further a composite material configuredwith a resin and a metal or a ceramic can be considered. Further, when amaterial having high transparency is used, a known light-shieldingmaterial is mixed.

The wiring layer 202 is formed on the base member 201 so that the wiringlayer surrounds circularly the region in which a plurality oflight-emitting elements are arranged, and includes a positive wiringelectrode pad 202A1 on the anode side and a negative wiring electrodepad 202B1 on the cathode side. The positive wiring electrode pad 202A1and the negative wiring electrode pad 202B1 are formed as a rectangle tohave a larger wiring area than the other wiring portions for easierelectrical connection to outside. Further, an extension wiring 202A2 isformed continuously to the positive wiring electrode pad 202A1, andfurther, a first connection wiring 202A3 is formed in a circular arcshape continuously to the extension wiring 202A2. Similarly, anextension wiring 202B2 is formed continuously to the positive wiringelectrode pad 202B1, and further, a second connection wiring 202B3 isformed in a circular arc shape continuously to the extension wiring202B2. In addition, the first connection wiring 202A3 and the secondconnection wiring 202B3, together with other wirings, a plurality ofthird connection wirings 202C1-202C4, are arranged circularly intruncations. Here, the third connection wirings 202C1-202C4 are formedin four locations. It is sufficient with that these third connectionwirings 202C1-202C4 form a circular wiring as a whole together with thefirst connection wiring 202A3 and the second connection wiring 202B3, itdoes not matter whether anyone or all of the third connection wiringsare not formed, according to the lengths of the circular arcs of thefirst connection wiring 202A3 and the second connection wiring 202B3.The wiring layer 202 (positive wiring electrode pad 202A1, extensionwiring 202A2, negative wiring electrode pad 20261, extension wiring202B2, third connection wirings 202C1-202C4) can be formed by use of ametal, for example, Cu, Ag, Au, Al, Pt, Ti, W, Pd, Fe, Ni, and an alloycontaining these metals. Such wirings can be formed by printing,electrolytic plating, non-electrolytic plating, evaporating, sputtering,etc. It should be noted that, when the base member 201 is metallic, aninsulating layer such as a glass-epoxy may also be formed between thebase member 201 and the wiring layer 202.

The resin frame 50 covers the first connection wiring 202A3, the secondconnection wiring 202B3, and the third connection wirings 202C1-202C4,and is formed in a circular shape. This resin frame 50 is formed with asame construction and a same material as explained already.

The first resin 30, being arranged inside the resin frame 50, namely ina region surrounded with the resin frame 50, is a resin layer containinga reflective material and covering a part of side surfaces of thelight-emitting element 40, a part of inner side surface of the resinframe 50, and the upper surface of the base body 200. This first resin30 is also formed with a same construction and with a same material asexplained already.

Further, a plurality of the light-emitting elements 40 are arrangedwithin the resin frame 50 of the base body 200 and are connected by awiring to anyone of the first connection wiring 202A3, the secondconnection wiring 202B3, and the third connection wirings 202C1-202C4.

Further, on the upper surface of the base body 200, an electrodeidentifying mark M10 for distinguishing the cathode and the anode may beformed and a plurality of indication marks M11 may be formed forindication when the resin frame 50 is arranged.

It should be noted that, similarly as already explained, for example,the second resin 70 may be arranged inside the resin frame 50 to coverthe light-emitting element 40 and the first resin 30.

The light-emitting device 10B provides an equivalent effect as thealready explained light-emitting devices 10, 10A.

<Manufacturing Method of Light-Emitting Device>

Next, explanations are given to a manufacturing method of alight-emitting device 10B. It should be noted that the light-emittingdevice 10B is assumed to be manufacture by a manufacturing processequivalent to the manufacturing method as explained referring to FIG. 4.

The manufacturing method of the light-emitting device 10B includes: afirst step S1 for mounting the light-emitting elements 40 on the uppersurface of the base body 200; a second step S2 for forming the resinframe 50 on the upper surface of the base body 200 to surround thelight-emitting elements 40 and to cover the upper surface of the firstconnection wiring 202A3, the second connection wiring 202B3, and thethird connection wirings 202C1-202C4; a third step S3 for injecting thefirst resin 30 containing a reflective material into inside the resinframe 50 so that the first resin 30 covers a part of the side surfacesof the light-emitting elements 40, a part of the inner side surface ofthe resin frame 50, and the upper surface of the base body 200; a fourthstep S4 for separating the first resin 30 into the reflective materiallayer 32 containing a reflective material and the resin layer 31containing none of the reflective material, by applying a centrifugalforce to the base body 200 by use of revolution of the base body 200. Itshould be noted that, in the first step of mounting the light-emittingelement 40, the light-emitting element 40, the first connection wiring202A3, the second connection wiring 202B3, and the third connectionwirings 202C1-202C4 are connected via wires for electrical connections.About respective steps, explanations are omitted, because equivalentworks are conducted similar to the above already explained steps.

Though, in the above embodiments, it is described more specificallyabout implementing the present invention, the scope of the presentinvention is not limited to these descriptions, and the presentinvention should be construed wider based on the descriptions in thescope of claims. Further, without mentioning, any modification or anyalteration based on the present descriptions are included in the scopeof the present invention.

1. A light-emitting device comprising: a base member; a base body formed on an upper surface of the base member, the base body comprising a wiring layer; a light-emitting element mounted on an upper surface of the base body, wherein the light-emitting element comprises an element-substrate, and a semiconductor layer located on the element-substrate; a resin frame located on the upper surface of the base body; and a first resin located inside the resin frame to cover a part of side surfaces of the light-emitting element, a part of inner side surface of the resin frame, and the upper surface of the base body, wherein the first resin comprises: a reflective material layer that contains a reflective material, and a resin layer that is located on an upper surface of the reflective material layer and does not contain the reflective material; wherein the reflective material is located in the reflective material layer to cover the upper surface of the base body; wherein, in a cross-sectional view, an upper surface of the resin layer comprises a flat region and a sloped region, and, in the sloped region, a height of the upper surface of the resin layer, measured from the upper surface of the base body, gradually increases in an outward direction from the flat region as the upper surface of the resin layer approaches the inner side surface of the resin frame, and wherein, in the cross-sectional view, a height of an upper surface of the first resin measured from the base body is less than a height of a bottom surface of the semiconductor layer measured from the base body.
 2. The light-emitting device according to claim 1, wherein an entire side surface of the resin layer facing toward the resin frame contacts to the resin frame.
 3. The light-emitting device according to claim 1, further comprising: a second resin covering an upper surface of the light-emitting element and the upper surface of the first resin.
 4. The light emitting device according to claim 1, wherein the base member is formed of a ceramic material.
 5. The light emitting device according to claim 1, wherein the base member is formed of a metal material.
 6. The light-emitting device according to claim 3, wherein the second resin comprises a phosphor.
 7. The light-emitting device according to claim 1, wherein the reflective material is titanium oxide.
 8. The light-emitting device according to claim 1, wherein the resin frame and the first resin contain a base resin of a same material.
 9. The light-emitting device according to claim 1, wherein, in the cross-sectional view, the inner side surface of the resin frame has a curved shape that bulges to a side facing toward the light-emitting element.
 10. The light-emitting device according to claim 9, wherein, in the cross-sectional view, the upper surface of the first resin covering the inner side surface of the resin frame has a height measured from the upper surface of the base body that is less than that of a position of an inner-most point of the resin frame.
 11. The light-emitting device according to claim 9, wherein a portion of the resin layer is located below an inner-most point of the resin frame.
 12. The light-emitting device according to claim 1, wherein, in the cross-sectional view, the resin frame has a shape of a circle, a partial circle, an oval, a partial oval, or a rectangle.
 13. The light-emitting device according to claim 1, wherein, in the cross-sectional view, an inner side surface of the resin frame facing the light-emitting element has a convex shape.
 14. The light-emitting device according to claim 13, wherein, in the cross-sectional view, the reflective material layer extends under an inner-most point of the inner side surface of the resin frame having the convex shape.
 15. The light-emitting device according to claim 14, wherein, in the cross-sectional view, the resin frame has a shape of a circle or a partial circle, and the inner-most point of inner side surface of the resin frame is a point on the circle or the partial circle.
 16. The light-emitting device according to claim 1, wherein the reflective material layer and the resin layer have no interface therebetween.
 17. The light-emitting device according to claim 1, wherein, in the cross-sectional view, an entirety of the upper surface of the reflective material layer is flat.
 18. The light-emitting device according to claim 1, wherein, in the cross-sectional view, the upper surface of the resin layer comprises an additional sloped region, and, in the additional sloped region, a height of the upper surface of the resin layer, measured from the upper surface of the base body, gradually increases in an inward direction from the flat region as the upper surface of the resin layer approaches a lateral surface of the light-emitting element.
 19. A light-emitting device comprising: a base member; a base body formed on an upper surface of the base member, the base body comprising a wiring layer; a light-emitting element mounted on an upper surface of the base body; a resin frame located on the upper surface of the base body, surrounding the light-emitting element, wherein, in a cross-sectional view, an inner side surface of the resin frame has a curved shape that bulges to a side facing toward the light-emitting element; and a first resin located inside the resin frame to cover a part of side surfaces of the light-emitting element, a part of inner side surface of the resin frame, and the upper surface of the base body, wherein the first resin comprises: a reflective material layer that contains a reflective material, and a resin layer that is located on an upper surface of the reflective material layer and does not contain the reflective material; wherein the reflective material is located in the reflective material layer to cover the upper surface of the base body; wherein, in the cross-sectional view, an upper surface of the resin layer comprises a flat region and a sloped region, and, in the sloped region, a height of the upper surface of the resin layer, measured from the upper surface of the base body, gradually increases in an outward direction from the flat region as the upper surface of the resin layer approaches the inner side surface of the resin frame, and wherein, in the cross-sectional view, a height of an upper surface of the first resin covering the inner side surface of the resin frame measured from the upper surface of the base body is less than a height of a position of an inner-most point of the resin frame measured from the upper surface of the base body.
 20. The light-emitting device according to claim 19, wherein the reflective material layer and the resin layer have no interface therebetween. 